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Samsung Electronics’ Pyeongtaek Campus (Photo courtesy of Samsung Electronics) |
[Alpha Biz= Paul Lee] SEOUL, June 19, 2025 — Samsung Electronics (KRX: 005930) announced plans to expand production of its next-generation 10nm-class 6th-generation DRAM, beginning in the second half of this year. The company will invest in new production lines at its state-of-the-art Pyeongtaek Plant 4 (P4) to support volume manufacturing of the advanced DRAM product.
Following a major redesign of the 10nm-class 6th-gen DRAM, Samsung has achieved significant improvements in yield. The company now aims to solidify its leadership in semiconductor technology by complementing its R&D breakthroughs with large-scale capacity expansion.
According to industry sources, Samsung’s new DRAM production line at P4 will begin equipment installation later this year, targeting completion by the second quarter of 2026. The new line is expected to produce approximately 80,000 12-inch wafers per month. P4, Samsung’s latest semiconductor fab, currently has a total monthly capacity of 200,000 wafers, but until now has been dedicated primarily to NAND flash.
This marks the first full-scale DRAM line to be installed at P4 and signals Samsung’s strong confidence in the commercial prospects of its 6th-generation DRAM. In addition, Samsung is reportedly planning to convert parts of its DRAM lines at the Hwaseong Line 17 fab to the same advanced node, with a monthly capacity of 15,000 wafers.
With this strategic investment, Samsung continues to reinforce its “super-gap” leadership in the global semiconductor market through both technological innovation and production scale.
Alphabiz Reporter Paul Lee(hoondork1977@alphabiz.co.kr)
