[Alpha Biz= Lee Joonhyun] DCIO Co., Ltd., a Korean power semiconductor specialist, has successfully commercialized high-voltage silicon carbide (SiC) MOSFETs rated at 1,700V, 2,000V, and 2,300V, strengthening its push into the high-voltage power semiconductor market.
With the launch of the new products, DCIO has completed a full SiC MOSFET lineup spanning 1,200V, 1,700V, 2,000V, and 2,300V. The company announced on the 14th that it is currently in supply discussions with major domestic corporations in the renewable energy, electric vehicle, and industrial power conversion sectors.
DCIO is one of the few specialized power semiconductor companies in Korea capable of independently managing the entire value chain—from device design and mass production to sales—while also offering integrated solutions that extend beyond discrete devices to power modules.
The newly introduced SiC MOSFET lineup consists of four voltage classes: 1,200V, 1,700V, 2,000V, and 2,300V. Notably, products rated at 1,700V and above have been commercialized for the first time in Korea, drawing significant attention from the industry.
In the global market, leading companies such as Infineon, Mitsubishi Electric, Wolfspeed, and ROHM are expanding their presence in electric vehicle traction inverters, wind and solar inverters, and industrial equipment, leveraging 1,200V- and 1,700V-class SiC devices and modules.
DCIO’s 1,200V SiC MOSFET achieves a specific on-resistance (Rₛₚ) of 2.2 mΩ·cm², a key performance indicator, placing it at a level comparable to that of global market leaders.
A DCIO official stated, “Building on the low on-resistance design and process technologies established for our 1,200V products, we successfully increased voltage ratings to 1,700V, 2,000V, and 2,300V while effectively suppressing power loss and heat generation.”
The 1,700V–2,300V product range primarily targets large-scale renewable energy facilities and high-voltage industrial inverter markets. Applications include wind and solar inverters, power conditioning systems (PCS) for energy storage systems (ESS), high-voltage industrial motor drives, and DC power distribution and conversion systems.
According to the company, these SiC-based solutions can simultaneously enhance efficiency and power density compared with conventional silicon IGBT-based systems.
Global industry leaders are also adopting full SiC modules in the 1,700V and 2,300V classes for applications such as wind power, railway systems, and high-voltage inverters, emphasizing system miniaturization and reduced power losses as key advantages.
DCIO plans to focus on high-efficiency industrial infrastructure markets, including industrial inverters, uninterruptible power supplies (UPS), welding machines, induction heating systems, and power supplies for data centers, with its 1,200V and 1,700V products serving as core offerings.
Through this product launch, DCIO expects to secure current conduction capability and durability comparable to top-tier global products, contributing to reduced reliance on imported components and enhanced stability of Korea’s domestic power semiconductor supply chain.
Kang Mi-sun, CEO of DCIO, stated, “The commercialization of these high-performance SiC MOSFETs represents a meaningful milestone that elevates Korea’s power semiconductor technology. We will continue to expand our portfolio of SiC-based devices and high-power modules to demonstrate strong technological competitiveness in the global market.”
Alphabiz 이준현 기자(wtcloud83@alphabiz.co.kr)
