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Samsung Electronics |
[Alpha Biz= Reporter Kim Young Taek] Samsung Electronics is ending its semiconductor production cutback and initiating new memory investments.
According to industry sources on the 16th, Samsung Electronics plans to establish a NAND flash line at its Pyeongtaek Plant 4 (P4) and will begin installing major equipment by the end of this month.
Samsung Electronics, the leader in both DRAM and NAND flash markets, believes the semiconductor market is entering a significant upturn.
Initially, the NAND flash line at P4 was supposed to be the first semiconductor manufacturing line at the plant, but the project was halted due to the economic downturn.
In early 2023, Samsung Electronics decided to reduce production due to an oversupply of semiconductors and halted major new construction projects.
This new line investment by Samsung Electronics is expected to have a considerable impact on the global semiconductor market.
Signs of recovery in the semiconductor market began to appear late last year, and Samsung Electronics is now preparing to accelerate line investments in the second half of this year.
With a clear recovery in demand, Samsung Electronics is moving forward with new investments and the establishment of new lines.
Samsung's decision to produce NAND flash rather than DRAM as the first product from P4 is attributed to the strong demand for NAND flash in AI servers.
AI servers, which are used for AI training and inference, require not only memory but also fast data storage devices for high-speed computation.
Following the NAND investment, Samsung Electronics also plans to set up a DRAM production line at P4.
The second phase (Phase 2) of P4 will be focused on DRAM production. This strategy aims to meet the demand for high-bandwidth memory (HBM) and strengthen Samsung's market share in the general-purpose DRAM market, signaling a full-scale resumption of its memory investments.
Alphabiz 김영택 기자(sitory0103@alphabiz.co.kr)
